📢 Exciting News! 📚 Our latest research paper in Nanomaterials has just been published! 🧪🔬
We delve into the fascinating world of 2H MoTe2 (molybdenum ditelluride) and its incredible potential. This material has garnered immense interest for its applications in superconductivity, nonvolatile memory, and semiconductors. It boasts a wide range of electrical properties that make it a true game-changer.
But what's even more intriguing is our exploration of MoTe2 in combination with hexagonal boron nitride (h-BN) within lateral heterostructures. This pairing offers a unique platform for crafting groundbreaking electronic devices.
In our study, we've successfully created highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) featuring MoTe2/h-BN heterojunctions. 🌟
Our findings reveal an efficient carrier modulation with ILG FETs, showcasing double the performance compared to standard back gating. We've achieved remarkable unipolar p-type behavior and significantly boosted mobility in MoTe2/h-BN heterochannels, setting new mobility records. At 80 K, we observed hole and electron mobility values ranging from 345 cm² V⁻¹ s⁻¹ to 285 cm² V⁻¹ s⁻¹.
But what sets our study apart is the drastic reduction of Schottky barriers, which allowed us to unlock the intrinsic, heterointerface conduction in the channels. This presents exciting opportunities for developing phase change devices using atomically thin membranes.
I want to extend my heartfelt thanks to our brilliant team, including Saidov Kamoliddin, Odilkhuja Parpiev, and Olim Ruzimuradov and our collaborators at EMPA Swiss Federal Laboratories for Materials Science and Technology: Gurdial Blugan, Sena Yuzbasi, and Natalia Kovalska. https://www.mdpi.com/2079-4991/13/18/2559
Stay tuned for more groundbreaking discoveries! 🌐🔍 #Nanomaterials #Research #Science #Innovation
We delve into the fascinating world of 2H MoTe2 (molybdenum ditelluride) and its incredible potential. This material has garnered immense interest for its applications in superconductivity, nonvolatile memory, and semiconductors. It boasts a wide range of electrical properties that make it a true game-changer.
But what's even more intriguing is our exploration of MoTe2 in combination with hexagonal boron nitride (h-BN) within lateral heterostructures. This pairing offers a unique platform for crafting groundbreaking electronic devices.
In our study, we've successfully created highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) featuring MoTe2/h-BN heterojunctions. 🌟
Our findings reveal an efficient carrier modulation with ILG FETs, showcasing double the performance compared to standard back gating. We've achieved remarkable unipolar p-type behavior and significantly boosted mobility in MoTe2/h-BN heterochannels, setting new mobility records. At 80 K, we observed hole and electron mobility values ranging from 345 cm² V⁻¹ s⁻¹ to 285 cm² V⁻¹ s⁻¹.
But what sets our study apart is the drastic reduction of Schottky barriers, which allowed us to unlock the intrinsic, heterointerface conduction in the channels. This presents exciting opportunities for developing phase change devices using atomically thin membranes.
I want to extend my heartfelt thanks to our brilliant team, including Saidov Kamoliddin, Odilkhuja Parpiev, and Olim Ruzimuradov and our collaborators at EMPA Swiss Federal Laboratories for Materials Science and Technology: Gurdial Blugan, Sena Yuzbasi, and Natalia Kovalska. https://www.mdpi.com/2079-4991/13/18/2559
Stay tuned for more groundbreaking discoveries! 🌐🔍 #Nanomaterials #Research #Science #Innovation
MDPI
Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor
2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides…